Samsung 850 EVO MZ-N5E500BW 500GB M.2 Internal SSD

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Samsung 850 EVO MZ-N5E500BW 500GB M.2 Internal SSD Product Description

3D V-NAND Technology

Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

TurboWrite Technology

Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.
* Performance compared to 3-Bit MLC-class SSD drives


Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
* Compared to same drive w/out RAPID enabled

Enhanced Endurance and Reliability

The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5 year warranty. With enhanced long-term reliability, the 850 EVO assures long-term dependable performance of up to 30% longer than the previous generation 840 EVO.
* Measured by Terrabytes Written (TBW)
** Measured with Sustained Performance 12hr Random Write Test
*** Highest among 3-Bit MLC-class SSD drives

Improved Energy Efficiency

The 850 EVO delivers significantly longer battery life on your notebook* with a controller designed and optimized for 3D V-NAND that supports. Device Sleep for Windows at a highly efficient 2mW. The 850 EVO supports 25% better power efficiency than the 840 EVO during write operations thanks to ultra-efficient 3D V-NAND only consuming 50% less energy than that of traditional Planar 2D NAND.
* Compared to standard hard drive & previous generation SSDs

Ultimate Flexibility

The versatile 850 EVO mSATA has you covered no matter which connector type or physical slot size your device has, making it perfect for desktops, laptops and even ultra-thin tablet PCs.

Advanced Encryption

The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256-bit hardware encryption secures data without any performance degradation and complies with TCG Opal 2.0. Easily integrate into Windows with Microsoft e-drive IEEE-1667 to keep your data protected at all times.

Dynamic Thermal Guard Protection

The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions to ensure the integrity of your data. The Thermal Guard automatically throttles temperatures down when temperatures rise above optimal critical threshold. This protects your data while maintaining responsiveness to help ensure your computer is always safe from overheating.

One-Stop Install Navigator

Migrate your data with ease. With the One-Stop Install Navigator, Samsung Data Migration and Magician software are installed simultaneously for your convenience to ensure that your SSD settings are optimized for an efficient data transfer.

Samsung Quality Components

As the industry SSD leader, Samsung uniquely designs, develops and manufactures products in-house. That means you're getting fully-optimized solutions for a better performance without the risk of compatibility errors.

Hard drive
Solid-state drive capacity 500 GB
Solid-state drive interfaces M.2
Internal Yes

TBW rating 150
Solid-state drive capacity 500 GB
Security algorithms 256-bit AES
S.M.A.R.T support Yes
Read speed 540 MB/s
TRIM support Yes
Solid-state drive interfaces M.2
Write speed 500 MB/s
Random write (4KB) 89000 IOPS
Random read (4KB) 97000 IOPS
Sequential writing Yes
Mean time between failures (MTBF) 1500000h
Data transfer rate 6 Gbit/s

Data transmission
Read speed 540 MB/s
Write speed 500 MB/s
Random write (4KB) 89000 IOPS
Random read (4KB) 97000 IOPS
Data transfer rate 6 Gbit/s

Internal Yes

Security algorithms 256-bit AES

Operating voltage 5V

Mean time between failures (MTBF) 1500000h

Operational conditions
Operating temperature (T-T) 0 - 70 °C

Technical details
S.M.A.R.T support Yes
TRIM support Yes
Sequential writing Yes

Weight & dimensions
Width 8.03 cm
Weight 127g
Height 2.21 cm
Depth 1.52 cm

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