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Product Description


Data centres must operate efficiently, delivering constant, exceptional performance with low latency to keep up with demand. It's critical that data centres maintain high stability because of the various read and write workloads and their need to continually operate 24/7. Exposure to data corruption, or deletion caused by unforeseen power outages, also are of high concern. As a leader in memory technology, Samsung has the expertise to offer data centres superior solid state drives (SSDs) that provide exceptional performance and high reliability, even in the unfortunate event of a power loss. Engineered specifically for data centres, Samsung's SSD 845DC EVO uses carefully selected NAND chips, optimized controller and dependable power-loss protection architecture to keep your data centre operating at high performance 24/7, 365 days a year. A data centre SSD must deliver performance consistency to satisfy Quality of Service (QoS) requirements. The QoS is measured by the percentage of response times that fall below a given value, characterized by the consistency of the steady performance the device delivers. This is of particular importance in cloud data centre environments. Low latency rates are also vitally important, which is the length of time between the memory's receipt of a read request and its release of data corresponding to the request, The 845DC EVO has a low latency rate for non-mixed, 100 percent random reads or writes, which translates into improved QoS. For sequential reads and writes, the 845DC EVO also shows impressive QoS results, as well as for mixed workloads. To meet the critical demands of the data centre environment, an SSD must maintain sustained performance over extended periods of time.


  • : Deliver consistent performance with low latency
  •  Maintain a high-level of sustained performance using the best-quality components
  •  Ensure high mixed workload performance
  •  Advanced ECC engine and end-to-end data protection

Barcode : 8806086207973
Cache Memory : 256 MB
Depth : 10.0 cm
Description : The Samsung SSD 845DC EVO was specifically developed to address these unique challenges and optimized to excel in virtually any data centre scenario, performing best when it matters the most. Using a memory, and Samsung's data centre optimized MEX controller, the 845DC EVO delivers high sustained random read/write and sequential read/write performance for diverse RAID configurations. The NAND chips used in the 845DC EVO are selected from the highest-quality wafers, tuned for high endurance and then tested at the component and system level before they are approved for use in the SSD. The 845DC EVO also boasts low power consumption and high cost-effectiveness. The I/O workloads generated in data centres involve a combination of various read/write mix ratios, request sizes and Native Command Queuing (NCQ) queue depths (QDs), depending on the type of service. The 845DC EVO is especially designed to answer the diverse needs of data centre applications by not limiting itself to simply improving basic read/write performances. It also provides outstanding performance for the various mixed workloads that access a server simultaneously. For various read/write ratios, the 845DC EVO presents overall superior performances, which contributes greatly to a data centre's total performance.
Drive Size : 2.5 Inches
Electrical Power Consumption : 3.1 W
Electrical Power Consumption Standby : 1.5 W
Enclosure type : Internal
Form Factor : SFF Drive
Height : 0.68 cm
Input Output Per Second : Random Read: 87,000 • Random Write: 12,000 IOPS
Interface Type : SATA 6Gb/s (Compatible with SATA 3Gb/s SATA 1.5Gb/s)
Latency (Reads) : 55 µs
Latency (Writes) : 45 µs

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